Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
June 19, 2013IEEE Electron Device Letters

Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs

View Full Paper
Ask AI
Bookmark
Share

Authors

GLGuowang LiNational University of Defense TechnologyDJDebdeep JenaCornell UniversityRWRonghua WangChongqing University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Li et al. (2013) studied this question.

synapsesocial.com/papers/6a98712b01769e43d5ad8ee6https://doi.org/10.1109/led.2013.2264311
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Electrical characteristics of magnesium-doped gallium nitride junction diodes1998 · 106 citations
  2. 2Accumulation hole layer in p-GaN/AlGaN heterostructures2000 · 62 citations
  3. 3Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers2010 · 148 citations
  4. 4Heavy doping effects in Mg-doped GaN2000 · 425 citations
  5. 5Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts2012 · 51 citations