Transistors: Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening (Adv. Mater. 3/2016)

On page 547, charged impurities in monolayer MoS2 are effectively screened by combining a high-κ dielectric substrate and a high density of carriers, leading to an unprecedented room-temperature electron mobility of ≈150 cm2 V−1 s−1. Y. Shi, G. Zhang, X. Wang and co-workers also demonstrate phonon-limited transport in monolayer MoS2 for the first time, an important milestone for electronic device applications.