Asymmetric conduction in a thin film tantalum/tantalum oxide/metal structure depends strongly on the method of preparation of the individual elements as well as the conditions under which the structure is measured. Some of the factors which need to be considered are: ( i ) gas and alloy metal content of the sputtered tantalum film; ( ii ) structural perfection of the tantalum film; ( iii ) nature of the metal counter electrode; and ( iv ) ambient factors such as the presence of moisture during measurement. The principal results from these investigations can be explained on the basis of flaws in the anodic oxide. Evidence exists, however, that some degree of asymmetric conduction exists in nominally flaw‐free films.
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Axelrod et al. (1969) studied this question.