Transport Coefficients of (Bi1‐xSbx)2Se3 Single Crystals

Abstract (Bi1‐xSbx)2Se3(x = 0.0 to 0.2) single crystals were prepared using a modified Bridgman method. Measurements of the Hall coefficient RH, electrical conductivity σ and Seebeck coefficient α showed that incorporation of the antimony atoms into the Bi2Se3 crystal lattice results in an increase in the free electron concentration for a low antimony content, whereas the free electron concentration is suppressed in the range of a high antimony content. This effect is explained qualitatively by changes in the concentrations of point defects in the (Bi1‐xSbx)2Se3 crystals. We asume that the substitution of Bi atoms by Sb atoms results in a decrease in the concentration of Se vacancies V and antisite defects BíSe. The course of the dependences of In (RHσ) vs In T manifests that in the temperature region of 100–400 K transport properties of the studied crystals are characterized by a mixed transport mechanism of free carriers, mainly on acoustical phonons and ionized impurities.