Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
August 1, 1972IEEE Transactions on Electron Devices

Electrical characteristics of bulk n-InP oscillators

View Full Paper
Ask AI
Bookmark
Share

Authors

RKR. KaulManipal Academy of Higher EducationHGH. L. GrubinUniversity of ConnecticutGLG.O. LaddUnited Aircraft (Russia)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Kaul et al. (1972) studied this question.

synapsesocial.com/papers/6a988c1912a35efd52bda368https://doi.org/10.1109/t-ed.1972.17530
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1CURRENT INSTABILITIES IN n-InP1971 · 8 citations
  2. 2Three-level transferred-electron effects in InP1971 · 27 citations
  3. 3Three-level oscillator: a new form of transferred-electron device1970 · 124 citations
  4. 4Transport Properties of GaAs1968 · 311 citations
  5. 5Observation of high-field domains in n type indium phosphide1971 · 16 citations