Electrochemical Engineering of Nd 3+ ‐Doped SrGa 2 O 4 for Advanced Supercapacitor Energy Storage Applications

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This study presents a comparative investigation of undoped strontium gallate oxide (SrGa 2 O 4 ) and neodymium‐doped strontium gallate oxide (SrGa 2 O 4 :1%Nd 3+ ) as electrode materials for supercapacitor applications (SGOE and NSGOE), synthesized via a solid‐state method. The introduction of Nd 3+ into the SGO lattice‐induced beneficial structural defects and oxygen vacancies, significantly improving conductivity and electrochemical activity. Phase formation and distribution of the particles in both materials were confirmed by structural and morphological analyses. It was determined that SGOE and NSGOE had a significantly higher specific capacitance of 873 F/g at 2 mVs/s than 660 F/g at SGOE and 556 F/g at 100 mVs/s at the undoped crystal, meaning that it had a better rate capability. Galvanostatic charge–discharge analysis also indicated that NSGOE reached a higher 388.9 F/g at 0.5 mA, which was better than SGOE, and higher capacitance at higher current densities. Long‐term cycling demonstrated excellent electrochemical stability, with the NSGOE electrode retaining approximately 95.9% of its initial capacitance after 5000 charge–discharge cycles. The impedance spectroscopy showed reduced charge‐transfer resistance and enhanced diffusion of ions in the doped material. These results demonstrate that NSGOE is a better option to SGOE and makes it a high‐performance, rare‐earth‐enhanced electrode to next‐generation supercapacitor systems.