In order to introduce ferromagnetic properties, ZnO single crystals have been implanted with Gd ions at 180keV ion energy and two different fluences. Magnetization reversal hysteresis loops have been recorded for as-implanted as well as annealed samples using a superconducting quantum interference device. It was found that for a fluence of 5×1015Gd+∕cm2, postimplantation annealing leads to an increase of the saturation moment up to 1.8μB∕Gd at 300K. Structural investigations revealed no secondary phase formation.
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Potzger et al. (2006) studied this question.
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