Simulation study demonstrates controlled transverse domain wall positioning in rectangular magnetic nanowires, indicating viable mechanisms for nanoscale magnetic memory design.
We have performed numerical simulations to demonstrate that the domain wall movement can be controlled introducing a distribution of magnetic impurities in a nanowire. In particular, we have considered two identical impurities equidistant from the nanowire width axis. Pinning and scattering sites for the domain wall can be defined by magnetic impurities, consisting of a local variation of the exchange constant. The domain wall motion was induced by application of a magnetic field pulse and our results indicate that it is possible to control the domain wall position.
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Toscano et al. (2014) studied this question.
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