The photoelectron yield has been measured in ultrathin InSb films as a function of the thickness in the energy-photon range 2–6 eV. The shift of the threshold for the photoelectrons from the conduction band and the strict inverse thickness dependence of the maximum in the yield of photoelectrons from the valence band permits the unambiguous testing of quantum size effects.
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Mancini et al. (1981) studied this question.
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