Influence of the grain size on the effective carrier mobility (μ eff ) and transfer characteristics of a polycrystalline silicon thin-film transistor (poly-Si TFT) has been theoretically investigated by developing an analytical model. The dependence of μ eff is studied as function of doping concentration and gate voltage for different values of grain size. It is observed that at low as well as at high doping concentrations, the effective carrier mobility (μ eff ) increases with increasing grain size, whereas the observed dip at the intermediate doping concentration is confirmed. The effect of the grain size on transfer characteristics of poly-Si TFT in its linear region is also presented. It is found that at low gate voltages, μ eff and I D increase rapidly with the increase in V G for all grain sizes due to the grain boundary barrier lowering effect. At high gate voltage the grain boundary barrier lowering effect becomes insignificant and causes the saturation of μ eff and I D . The model was found to account correctly for the experimentally observed mobility variation and yield a reasonably good agreement.
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Gupta et al. (2005) studied this question.
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