Finite element analysis (FEA) simulation has been performed to evaluate the scaling of the nanoelectromechanical nonvolatile memory cell. FEA simulation predicted program/erase voltage and also hysteresis voltage more accurate than the analytical modeling in our previous work. It is because FEA simulation reflects the actual memory cell structure and includes nonlinear effects such as beam-stretching effect. Additionally, in the FEA simulation, shear strain has been considered for the accurate evaluation of beam deformation.
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Roh et al. (2010) studied this question.
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