In 0.53 Ga 0.47 As liquid phase epitaxy on (100)-InP substrates at low growth temperatures

In0.53Ga0.47As epitaxial layers of high quality and excellent surface morphology have been grown in an automated LPE system. The growth temperature was varied between 500 and 63O°C. Room-temperature Hall measurements indicated a net carrier concentration of n = 8 × 1014 cm−3 and mobility values of μ = 13000 cm2V−1 s−1 at TG 617°C and n = 7.7 × 1015 cm−3 and μ = 9800 cm2 V−1 s−1 at TG = 517°C, respectively.