The authors demonstrate an integratable high-responsivity high-bandwidth long wavelength InGaAs-InP-InAlAs avalanche photodiode based on an asymmetric twin-waveguide structure. The device has an external quantum efficiency of 48 /spl plusmn/ 1.5% at /spl lambda/ = 1.55 μm, a 3-dB bandwidth of 28.5 /spl plusmn/ 0.5 GHz with gain of up to 4, and a fiber-to-waveguide misalignment tolerance of /spl plusmn/ 1.0 μm in the vertical and /spl plusmn/ 1.3 μm in the horizontal directions resulting in a 1-dB sensitivity penalty.
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Wei et al. (2002) studied this question.
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