Epitaxial regrowth of silicon implanted with argon and boron

The epitaxial regrowth of silicon implanted with both argon and boron is performed by isochronal furnace and cw laser annealing. Argon is found to enhance the thermal anneal threshold for boron-silicon reordering, while itself exhibiting essentially no redistribution after annealing. Boron, by comparison, increases the solid-phase regrowth velocity and prevents the outdiffusion of argon. Based on these findings, a methodology for forming and preserving shallow boron junctions is suggested.