Short-channel MOS FET’s are successfully fabricated using Q-switched ruby laser irradiation on As-implanted sources and drains. Implantation and laser irradiation are both self-aligned by the polysilicon gate electrodes. The threshold-voltage–vs–channel-length relation is improved as a result of the extremely limited lateral diffusion of implanted As atoms.
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Koyanagi et al. (1979) studied this question.
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