EPR identification of intrinsic defects in SiC

The structure determination of intrinsic defects in 4H‐SiC, 6H‐SiC, and 3C‐SiC by means of EPR is based on measuring the angular dependence of the 29Si/13C hyperfine (HF) satellite lines, from which spin densities, sp‐hybrid ratio, and p‐orbital direction can be determined over major atoms comprising a defect. In most cases, not only the assignment of the variety due to the inequivalent sites (h ‐ and k ‐sites in 4H‐SiC) but also the identification of the defect species is accomplished through the comparison of the obtained HF parameters with those obtained from first principles calculations. Our works of identifying vacancy‐related defects such as the monovacancies, divacancies, and antisite‐vacancy pairs in 4H‐SiC are reviewed. In addition, it is demonstrated that the observation of the central line of the TV2a center of S = 3/2 has been achieved by pulsed‐ELDOR. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)