A V-band, high gain, low noise, monolithic PHEMT amplifier mounted on a small hermetically sealed metal package

V-band, high gain, low noise, monolithic amplifiers based on 0.15-μm AlGaAs-InGaAs-GaAs pseudomorphic HEMT's have been developed. The four-stage amplifier has been assembled on a small hermetically sealed metal package and has achieved a noise figure of 3 dB with a small signal gain of 42.2 dB at 51 GHz. The overall amplifier measured 14.2×20.0×2.3 mm3. The two-stage amplifier has been mounted on a carrier-type fixture and has achieved a noise figure of 2.5 dB with a small signal gain of 20.4 dB at 51.5 GHz. These results represent the best noise figure and the highest gain ever achieved by a monolithic amplifier using GaAs- or InP-based HEMT devices at these frequencies.