The authors have obtained, from 20 µm aperture 0.98 µm wavelength three-core ARROW-type InGaAs/InGaAsP/InGaP diode lasers, a diffraction-limited beam pattern up to 0.55 W peak-pulsed power with 78% of the light in the central lobe; and near diffraction-limited-beam operation to 0.7 W. Interelement optical absorption loss is found to be important for improved beam quality at high drive levels, in good agreement with theory.
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Bhattacharya et al. (1995) studied this question.
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