Double integrated nanostructures for pulsed 0.9-μm laser diodes

Double integrated laser InGaAs/GaAs/AlGaAs heterostructures grown by the method of metal-organic vapor phase epitaxy (MOVPE) in a single epitaxial process are studied. Typical slopes of the watt—ampere characteristic for a single laser diode were 1.08–1.15 W A -1 , while these slopes for the double integrated laser diode proved to be considerably higher (1.88–2.01 W A -1 ). The manufactured double laser diodes emitting ∼0.9 μm, 100-ns pulses at a pulse repetition rate of 10 kHz produce an output power of 50 W at pump current of 30 A.