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Selective photochemical dry etching of GaAs layers on AlGaAs using HCl gas and InGaAs layers on InAlAs using CH3Br gas is studied. A low pressure mercury lamp was used as the deep UV light source. A selectivity of more than 150 for GaAs over AlGaAs and more than 60 for InGaAs over InAlAs was obtained.
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Kosugi et al. (1991) studied this question.
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