Scanning tunneling microscopy is used to provide integrated imaging, processing and electrical characterization on the nanoscale level for the same defect region in CuInSe2. The use of coordinated electronic and photon biasing is demonstrated to provide specific atomic imaging for covalently bonded semiconductors. The high-resolution conditions of the instrument provide for nanoprocessing with passivation of defects using oxygen. The same regions are analyzed for minority-carrier losses by a nanoscale electron-beam induced current technique.
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Lawrence L. Kazmerski (1991) studied this question.