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December 1, 1986Japanese Journal of Applied Physics

Hole Transport in a-Si:H(F) Prepared by Hydrogen-Radical-Assisted Chemical Vapor Deposition

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Authors

NSNaoki ShibataTokyo Electron (Japan)AMAkihiro MiyauchiATAkihito TanabeTokyo Institute of Technology

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Cite This Study

Shibata et al. (1986) studied this question.

synapsesocial.com/papers/6a9920e524d3faa49b749e95https://doi.org/10.1143/jjap.25.1783
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Also Consider

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  1. 1Amorphous silicon solar cells1977 · 267 citations
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  3. 3Derivation of the low-energy optical-absorption spectra of a -Si: H from photoconductivity1980 · 118 citations
  4. 4The Role of Hydrogen Radicals in the Growth of a-Si and Related Alloys1986 · 37 citations
  5. 5Hole Transport in Glow-Discharged a-Si:H Films Compensated with Boron1986 · 6 citations