The electron spin resonance (ESR) has been measured on boron doped a-SiN x :H (x=0.07). It is found that the spin density of neutral silicon dangling bonds in a-SiN x :H (x=0.07) decreases as the Fermi level shifts toward the mid gap by doping boron. This decrease of spin density is considered mainly due to the decrease of the dangling bond density by chemical or electrical compensation of four-fold coordinated nitrogen and boron.
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Nojima et al. (1985) studied this question.
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