Electronic transport and metastabilities in P-doped a-Si:H

Effect of thermal and light induced metastabilities on conductivity (σ) and thermopower (S) in phosphorus doped a-Si:H films has been studied. It has been found that although both conductivity and thermopower show a change upon fast quenching, the function Q=ln σ−eS/k does not change. This suggests that quenching results in a new frozen-in structure, in which the position of the Fermi level is changed, but there is no change in the potential fluctuations. No measurable effect of light soaking is observed in our films.