Low‐temperature amorphous silicon p–i–n photodiodes

Amorphous silicon p–i–n photodiodes are important for image sensors and solar cells. The paper describes the properties of photodiodes fabricated below 200 °C on flexible plastic substrates. The increased defect density of the low‐temperature growth increases the reverse saturation current but the forward characteristics are largely unchanged. The role of the dangling bond defects in the diode characteristics is discussed.