Preparation and characterization of (Bi2S3)1−x(CdS)x solid solution thin films

Solid solution thin films of (Bi2S3)1−x(CdS)x for different compositions x=0,0.35,0.60,0.81,1.0 are prepared for the first time by electroless deposition on glass and Si 〈111〉 substrates. Composition of the films has been measured using helium Rutherford backscattering method which are in good agreement with mole fraction of parent nitrate solutions used for the preparation. Scanning electron microscopy studies indicated formation of good quality films and band-gap studies of the films confirmed the formation of solid solution. The band gaps of the samples of different compositions were found to vary linearly with composition, decreasing with increase in Bi2S3 atomic concentration.