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One of the problems occurring in conjunction with the integration of Ba0.7Sr0.3TiO3 (BST) thin film capacitors into the Si technology is the large increase of leakage current after a forming gas heat treatment. In order to reveal the underlying mechanism, we studied the electric properties of Pt/BST/Pt (metal–insulator–metal) (MIM) structures after annealing in atmospheres containing hydrogen (H2) or carbon monoxide by means of admittance spectroscopy. Frequency-dependent capacitance measurements on these MIM structures revealed a thermally activated relaxation step at low frequencies with an activation energy of 0.62 eV. Admittance spectroscopy, in which the conductance is monitored as a function of temperature and frequency, verifies the Schottky barrier heights at the Pt/BST interface revealed by dc measurements. We found that the Schottky barrier height decreased by 0.4 eV after annealing in a reducing atmosphere, independent of the presence of protons.
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Liedtke et al. (2000) studied this question.
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