Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
September 1, 1997Integrated ferroelectrics

The effects of forming gas anneal on the electrical characteristics of ir-electroded BST thin film capacitors

View Full Paper
Ask AI
Bookmark
Share

Authors

DHDaniel HadadTCTung‐Sheng ChenNational Taiwan Normal UniversityVBVenkatasubramani Balu

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Hadad et al. (1997) studied this question.

synapsesocial.com/papers/6aade23e322a2d038800dd2ahttps://doi.org/10.1080/10584589708013020
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched one closely related paper. Consider it for comparative context:

  1. 1Deposition of extremely thin (Ba,Sr)TiO3 thin films for ultra-large-scale integrated dynamic random access memory application1995 · 287 citations