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Thin-film diodes composed of Cu-doped p-type CdS (CdS(Cu)) and non-doped n-type CdS films (CdS(Cu)/CdS diode) were fabricated by an all-vacuum deposition process. The diodes showed good rectification characteristics and light emission of blue-green, green and red colors under a forward current at 77 K. The colors of light were changed by the Cu concentration, thickness of the Cu-diffused CdS layer and current density. It is thought that light emission of the diode was generated by a p-CdS(Cu)/n-CdS homojunction.
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Abe et al. (2002) studied this question.
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