Experimental study demonstrates reduced low-temperature oxide ion conductivity in vanadium-substituted Ba7Nb4MoO20, indicating that local defect trapping suppresses ion migration.
The effect of isovalent V 5+ substitution for Nb 5+ on the crystal structure and oxide ion conductivity of Ba 7 Nb 4- x V x MoO 20 ( x = 0.00, 0.05, 0.15) has been investigated. Despite no change in nominal oxide ion carrier concentration, a significantly reduced bulk oxide ion conductivity is observed below ∼ 400 °C upon increasing x , suggesting enhanced local oxide ion trapping. This may arise from the formation of defect associates between V 5+ centres and interstitial oxide ions, creating energetically favourable trapping sites that reduce the population of mobile charge carriers available for long-range diffusion. This behaviour contrasts with that of Ba 3 Nb 1- x V x MoO 8.5 , where moderate V 5+ substitution significantly improves oxide ion transport. This suggests that oxide ion migration in Ba 7 Nb 4 MoO 20 is more sensitive to local structural perturbations than the hexagonal perovskite derivative Ba 3 NbMoO 8.5 . At higher temperatures, thermal activation overcomes trapping effects, while lattice expansion and increased tetrahedral distortion promote oxide ion diffusion so that the conductivities of the substituted and unsubstituted compositions converge near 650 °C. These results highlight the importance of local structural chemistry in controlling oxide ion transport in hexagonal perovskite derivative oxide ion conductors.
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Tawse et al. (2026) studied this question.
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