What does this research mean for the field?

In backside-illuminated CMOS image sensors, total ionizing dose effects on dark current are dominated by the transfer gate oxide at lower doses and the backside oxide at higher doses, while quantum efficiency degradation is driven by surface recombination at the backside oxide. Novelty: ClaimNovelty.INCREMENTAL. Consensus alignment: ConsensusAlignment.NEUTRAL.

What question did this study set out to answer?

To identify and clarify how distinct dielectric oxides surrounding the pinned photodiode contribute to total ionizing dose degradation in backside-illuminated CMOS image sensors.

September 3, 2026Radiation effects and defects in solids

Total ionizing dose effects on backside-illuminated CMOS image sensors through experiments and TCAD simulations

View Full Paper

Ask AI

Bookmark

Authors

MLMingyu LIUXinjiang Agricultural University BLBingkai liuXinjiang University LWLin WenXinjiang University

Discussion

Member takes

Implication

Experimental and simulation study reveals oxide-specific radiation damage in backside-illuminated CMOS image sensors, indicating critical sources of dark current and efficiency loss.

Key Points

To identify and clarify how distinct dielectric oxides surrounding the pinned photodiode contribute to total ionizing dose degradation in backside-illuminated CMOS image sensors.
Conducted gamma-ray irradiation experiments on backside-illuminated CMOS image sensors up to several Mrad(Si).
Performed technology computer-aided design (TCAD) simulations calibrated against the experimental radiation results.
Identified the transfer gate oxide as the primary contributor to dark current at several hundred krad(Si), whereas the backside oxide dominates at several Mrad(Si).
Demonstrated a dynamic full-well capacity effect at low dose levels caused by dynamic equilibrium between the pinned photodiode and floating diffusion.
Established that surface recombination at the backside oxide drives quantum efficiency degradation across both short and long wavelengths.

Cite This Study

LIU et al. (2026) studied this question.

synapsesocial.com/papers/6a9935f3636c6408cfa7eae4 https://doi.org/10.1080/10420150.2026.2721519

View Full Paper

Ask AI

Bookmark

Implication

Experimental and simulation study reveals oxide-specific radiation damage in backside-illuminated CMOS image sensors, indicating critical sources of dark current and efficiency loss.

Total ionizing dose effects on backside-illuminated CMOS image sensors through experiments and TCAD simulations

Discussion

Member takes

Implication

Key Points

Cite This Study

Total ionizing dose effects on backside-illuminated CMOS image sensors through experiments and TCAD simulations

Discussion

Member takes

Implication

Key Points

Cite This Study

Also Consider

Also Consider