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Silicon delta doping in GaInP material has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by Hall-effect and capacitance-voltage (C-V) measurements. The mobility enhancement of delta-doped samples over their corresponding uniformly doped samples was observed. High sheet carrier density of N S=1.21×1013 cm-2 could be obtained. A sharp carrier distribution profile with the full width at half maximum of 25 Å has been achieved.
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Wang et al. (1995) studied this question.
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