Pd/InGaP hydrogen sensors based on the metal-oxide-semiconductor (MOS) and metal-semiconductor Schottky diodes have been fabricated and systematically studied. The effects of hydrogen adsorption on device performances such as the current-voltage characteristics, barrier height variation, hydrogen coverage, and heat of adsorption are investigated. The studied devices exhibit very wide hydrogen concentration detection regimes and remarkable hydrogen-sensing properties. Particularly, an extremely low hydrogen concentration of 15 ppm H/sub 2//air at room temperature can be detected. In addition, under the presence of oxide layers in the studied MOS device structure, the enhancements of barrier height and high-temperature operating capability are observed. The initial heat of adsorption for Pd/oxide and Pd/semiconductor interface are calculated as 355 and 65.9 meV/atom, respectively. Furthermore, the considerably short response times are found in studied devices.
No takes yet. Share an insight, caveat, or question.
Lin et al. (2004) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:
More from IEEE Sensors Journal