Antireflection Effect of Self-Organized GaN Nanotip Structure from Ultraviolet to Visible Region

A self-organized GaN nanotip structure was fabricated by means of reactive ion etching using Cl 2 plasma. We have revealed, in Fourier transform analysis, that the self-organized nanotip structure has a two-dimensional isotropic distribution and broadband structure frequencies of the nanotips with the most frequent spatial frequency of 10.4 µm -1 . It has been found that the nanotip surface, which is a fine structure with periods smaller than the wavelength of light, provides antireflection and enhanced transmission effects from the ultraviolet to the visible region (330 nm–800 nm). These excellent antireflection performances of the GaN nanotip structure are of interest for optoelectronic applications in GaN-based devices.