The Si—C Bond Distance in Si(CH 3 ) 4

A reinvestigation of tetramethylsilane by electron diffraction has led to the result Si-C = 1.888 ± 0.02 Å. (previous report: 1.93 ± 0.03 Å.), in agreement with the values found for carborundum (1.88-1.90 Å.), the three other methylsilanes (1.87 Å.), and Si_2(CH_3)O_5 (1.90 ± 0.02 Å.).