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A SiC thin-film thermistor for high-temperature use has been developed by using rf-sputtered SiC thin films. This thermistor can be used for industrial and consumer use within an operating temperature range of -100 to 450 degrees C. By using SiC thin films, the thermistor maintains high electrical stability. The resistance change is less than 3% after exposure to heat at 400 degrees C for 2000 h. In addition, the film growth technique made possible the production of a high-accuracy thermistor, i.e., thermistor coefficient < +/-0.5%, thermistor resistance < +/-1.5%.
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Wasa et al. (1979) studied this question.
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