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Low-temperature preparation of ferroelectric Pb[Zr0.2Ti0.3(Mg1/3Nb2/3)0.3(Zn1/3Nb2/3)0.1(Mg1/2W1/2)0.1]O3 thick films by a screen-printing method on ZrO2 ceramic substrates and Si substrates was examined. The influence of excess PbO as a sintering aid was investigated in comparison with bulk ceramics. The remanent polarization and coercive field of the thick film fired at 850°C on Si substrate were 8.1 µC/cm2 and 5.7 kV/cm, respectively. The low-temperature process using this ferroelectric thick film is very promising for the development of advanced microactuators.
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Futakuchi et al. (2000) studied this question.
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