Interface structure plays an extremely important role in the charge-transfer and photocatalytic performances in plasmonic metal/semiconductor systems. Defect engineering by introducing an oxygen vacancy (O vac ) is an effective way to modulate the interface structure. Here, a representative photocatalyst system including TiO 2, TiO 2– x, Au-TiO 2 and Au-TiO 2– x as designed delicately to reveal the detailed mechanism of the plasmon-resonance-induced charge separation in interfacial defect structure from the nanoscale. The local charge transfer via a conducting amorphous-like interface layer is visualized as the arched valence change from Ti 3+ to Ti 4+ at the Au-TiO 2– x interface after Schottky contact. This phenomenon eventually leads to the enhancement of localized surface plasmon resonance (LSPR) at 2.3 eV, and the introduction of O vac reduces the Schottky barrier height of Au-TiO 2– x by 5 mV compared with that of Au-TiO 2 . Under visible light, Au-TiO 2– x excites the most photogenerated carriers to the surface, which is larger than that of TiO 2– x and Au-TiO 2 . It can be concluded that the changes in electronic structure eventually promote charge transfer in visible light and explain the original reason that the coupling of O vac and Au could improve the photocatalytic performance.
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Lin et al. (2020) studied this question.
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