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It was found that RIE using CH4/H2 is a high resolution dry etching technique which is suitable for a variety of II-VI semiconductors. The optimum conditions for etching of ZnTe are given. The quality of surfaces etched under these conditions has been examined using XPS and Raman spectroscopy, both techniques indicating little overt damage.
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Foad et al. (1991) studied this question.
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