Equilibrium and nonequilibrium charge-state distributions have been obtained for high-energy ions emerging from crystals. In a major channeling direction in silicon, the slower ions and those incident in low charge states emerge nearly at equilibrium, with a mean charge close to that in a random direction. High-energy channeled oxygen 8⁺ ions emerge far from equilibrium, indicating a capture cross section of less than 2×{} 10^-19 cm².
No takes yet. Share an insight, caveat, or question.
F. W. Martin (1969) studied this question.
Synapse has enriched one closely related paper. Consider it for comparative context: