High‐Mobility Organic Transistors with Wet‐Etch‐Patterned Top Electrodes: A Novel Patterning Method for Fine‐Pitch Integration of Organic Devices

A new patterning process of contact electrodes on organic semiconductors is developed to fabricate high-mobility, short-channel organic transistors for high-speed operation. Deposition of gold electrodes on pristine organic films and wet-etching of gold films make it possible to obtain low contact resistance of about 200 Ω cm. The highest cut-off frequency of 19 MHz is demonstrated for p-type transistors.