AlGaN/GaN HEMTs on SiC and Si substrates: A review from the small-signal-modeling's perspective

In this article, small-signal modeling approaches for GaN HEMTs on SiC and Si substrates have been developed. The main advantage of these approaches is their accuracy, reliability, and dependency on only cold S-parameter measurements to extract the parasitic elements of the device. The proposed equivalent circuit model for GaN on Si HEMT considers extra effects due to parasitic conduction through substrate or buffer layers. S-parameter measurements at different bias conditions in addition to physical based analysis have been used to validate the accuracy and reliability of the developed modeling methods.