Low Temperature Processing of Nanocrystalline Lead Zirconate Titanate (PZT) Thick Films and Ceramics by a Modified Sol-Gel Route

Dispersing fine particles into a sol-gel matrix is a promising process to get a thick 0–3 composite coating layer. In this paper, we have further improved this modified sol-gel process by nanocrystalline composite technique to realize the low temperature annealing. Dense Pb(Zr, Ti)O 3 (PZT) thick films of 10 to 50 µm in thickness have been obtained on the platinum-coated silicon substrates by spin-coating at sintering temperature of 600–700°C and fully developed submicron-sized grains have been demonstrated in screen-printing piezoelectric films on alumina substrates at sintering temperature of 700–800°C. The dependence of various properties such as microstructure, crystallization, ferroelectric and dielectric properties of such made thick films on the processing parameters have been investigated. For a 10 µm-thick film spin-coated on silicon wafer, the dielectric loss and relative permittivity are 0.010 and 1024, respectively, at 1 kHz. The remanent polarization ( P r ) and the coercive field ( E c ) are 13.6 µC/cm 2 and 34.5 kV/cm, respectively. Obviously, such made thick film has comparable properties with bulk PZT ceramic. This novel technique can be extensively used in sol-gel, screen-printing, tape-casting, even in traditional ceramic process to reduce the process temperature.