Synthesis and thin film electronic properties of two pyrene-substituted oligothiophene derivatives

The synthesis and the electric properties of two new pyrene end-substituted oligothiophene derivatives (Py-nT, n = 2,4) are described. The highest hole mobility (ca. 10−3 cm2 V−1 s−1) was obtained for vacuum evaporated thin films of Py-4T as the active layer in field effect transistors based on hexamethyldisilazane-treated SiO2/Si substrates. Moreover, Py-nT thin films were doped with molecular iodine, which led to a 106 fold increase of electric conductivity. In the case of Py-4T, a value of 1 S cm−1 was obtained after 21 minutes exposure to iodine vapor.