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A new type of MOS field effect transistor has been fabricated utilizing anodically formed valve metal oxide films (AMOS). These anodic oxide films such as hafnium dioxide (HfMOS) offer the advantage of producing high dielectric constant insulators in the channel in order to improve the transconductance (gm) and voltage gain (µA= Cin/Cfb) of the device.
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Witt et al. (1967) studied this question.
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