Low threshold (Ith ≃20mA) 1.3μm GaInAsP p-substrate buried crescent lasers with output powers in excess of 30 mW/facet have been modulated into the X-band at 24°C. The chip capacitance deduced from scattering parameter (S11) measurements was as low as 3pF. A 3dB direct modulation bandwidth of ~11.5 GHz has been observed at a bias current equal to 5Ith.
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Ng et al. (1988) studied this question.
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