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A lithographic process based on focused ion beam bombardment is developed for selectively closing and opening nanochannels on a porous anodic alumina film. This resist-free process is based on the use of focused ion beams with different energies that strike a balance between material sputtering and material relocation. This process is used to selectively grow nanowire patterns of different elements.
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Liu et al. (2008) studied this question.
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