A microchip containing gated field-emitter display (FED) cells is designed and fabricated using vapor-deposited p-type polycrystalline diamond films and employing an integrated circuit (IC)-compatible diamond film technology on oxidized 4-in Si wafers. Current-voltage (I-V) data, measured in a diode configuration at 10/sup -6/ torr, show Fowler-Nordheim (F-N) field emission behavior. A 1/spl times/4 pixel diamond gated display cell is demonstrated for the first time using phosphor-coated glass as an anode.
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Hong et al. (1999) studied this question.
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