Electron field emission characteristics of planar diamond film array synthesized by chemical vapor deposition process

Selected area deposition of diamond films on silicon substrates was successfully achieved using the patterned Pt layer as a nucleation inhibitor in the chemical vapor deposition process. The planar diamond film array thus made possesses good electron field emission properties, that is, emission current density of (Je)Si=150 μA/cm2 (under 23.6 V/μm) and turn on field of (Eo)Si=10 V/μm. Precoating a thin Au layer (20 nm) on a Si surface further increased the emission current density to (Je)Au/Si=960 μA/cm2 (under 23.6 V/μm) with (Eo)Au/Si=10 V/μm. The effective work functions (φ) estimated by Fowler–Nordheim plots of the I–V characteristics are (φ)Si=0.059 eV and (φ)Au/Si=0.085 eV. The emission properties of both planar diamond film arrays satisfy the requirement for applying as the electron emitters in the flat panel displays.