Observation of photoluminescence from Al1−xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy

We have observed photoluminescence of Al1−xInxN films. The films were grown on GaN by atmospheric pressure metalorganic vapor phase epitaxy. GaN was grown on a c-plane sapphire substrate with a low-temperature deposited AlN buffer layer. Photoluminescence, absorption, and x-ray diffraction measurements have shown that each spectral peak shifts with alloy composition x and that Al1−xInxN heteroepitaxial films are not macroscopically in phase separation and are constituted in the wurzite structure.